Toshiba Corporation on Friday announced that it will build a new 300-millimeter wafer fabrication facility to increase its power semiconductor production capacity by March 2025. A Toshiba spokesperson said the Japanese industrial conglomerate will invest around 100 billion yen ($873 million) in the new plant, on top of a 25 billion yen ($217 million) investment in a 300-millimeter fabrication line it is building at an existing chip plant. The construction of a new wafer fabrication facility in Ishikawa Prefecture will take place in two phases, with the production start of Phase One scheduled for within fiscal 2024, according to the company’s statement. Toshiba noted that Toshiba’s power semiconductor production capacity would be 2.5 times higher than in fiscal 2021 when the first phase of production reaches full capacity. “The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines, and the latest energy-saving manufacturing …